DS200TCCAG1BAA Driver Modules

DS200TCCAG1BAA combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and transistor. Its fast response time, high operating current, and high withstand voltage make it popular in switching power supplies, frequency converters, inverters, and other fields.

DS200TCCAG1BAA Due to the characteristics of the IGBT itself, its work will occur when the engine effect will lead to the gate out of control, or due to the current and voltage is too large or unstable, resulting in damage to the IGBT and can not work properly. For this reason, the driving and protection of IGBT (especially short-circuit overcurrent protection) puts forward high requirements.

DS200TCCAG1BAA main features are: (1) high-speed input and output isolation, high dielectric strength * 2500VAC / min; (2) input and output levels and TTL level compatibility, suitable for microcontroller control; (3) internal timing logic short-circuit protection circuit, while having a delay in the protection characteristics; (4) with a reliable on and off measures (using dual power supply); (5) drive Power, can drive 600A / 600V or 400A / 1200V IGBT module.