HC422B N-300 Intelligent Ethernet Connection Module

HC422B N-300

D2-08ND3 – 8 pt. 12-24 VDC current sinking/sourcing, 1 common (2 common terminals), removable terminal

 

D2-08TD1 – 8 pt. 12-24 VDC current sinking output module, 1 common (2 common terminals), 0.3A/point, 2.4A/module, fused per common (non-replaceable), removable terminal

twork communication (Unicom, Telecom, Mobile)

Support low power consumption mode

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Description

HC422B N-300 Intelligent Ethernet Connection Module


HC422B N-300 is based on industrial Ethernet and PROFIBUS-DP fieldbus architecture, integrated with HAMS based on HART standard protocol for unified management of field intelligent devices, and can be easily integrated with SIS, PLC, MES, ERP and other systems, so that the field intelligent instrumentation and equipment, control systems, enterprise resource management system seamless transmission of information between the system, to achieve the Intelligent factory, management and control integration.

HC422B N-300 system integrates advanced control algorithm platforms for thermal power, chemical industry and other industries, providing in-depth and comprehensive solutions for factory automatic control and enterprise management, so as to realise the optimal coordination of the three major objectives of production, equipment and safety, and to help users realise the smallest whole-life-cycle maintenance cost and the largest return on equipment investment.

HC422B N-300 recognition MARK point of the X coordinate is just D3, that is, D5 = D3, and each piece of substrate in the placement of the position will be absolutely different, so there will be a deviation △ d, according to △ d each time in the CCD recognition MARK point to the knife 1 after the movement of the distance of the D4 ± △ d, this is the process of bias correction, the principle of other knives are also the same, in the deflection of the delineation of the line also Is determined according to the coordinates of the CCD first MARK recognition. After scribing the TFT surface, the TFT surface is dissected on the CF surface, and then the CF surface is scribed, and then the CF surface is dissected on the TFT surface, so that the scribing of the substrate is completed.